F-20
01/99
PJ32 Process
Silicon Junction Field-Effect
Transistor
¥ General Purpose Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
G S-D S-D G
Die Size = 0.
018" X 0.
018" All Bond Pads = 0.
004" Sq.
Substrate is also Gate.
Devices in this Databook based on the PJ32 Process.
Datasheet
2N5020, 2N5021 2N5460, 2N5461 2N5462
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At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Inp...