Product Description
Sirenza Microdevices’ SPF-2086T is a high performance 0.
25µm pHEMT Gallium Arsenide FET with
Schottky barrier gates.
This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements.
At 5V,40mA the device delivers excellent output TOI of 32 dBm.
It provides ideal performance as driver stages in many commercial, industrial and military LNA applications.
SPF-2086T
Low Noise pHEMT GaAs FET
0.
1 - 12 GHz Operation
35 30
Gain, Gmax (dB)
Typical Gain Performance
3v, 20mA 5v, 40mA
25 20 15 10 5 0 0 2 4 6
Gmax Gain
Product Features • 22 dB Gmax at 1.
9 GHz • 0.
4 dB FMIN at 1.
9 GHz • +32 dBm Output IP3 • +20 dBm Output Power at 1dB C...