|
Part Number
|
SPM6G060-120D |
|
Manufacturer
|
Sensitron |
|
Description
|
Three-Phase IGBT BRIDGE |
|
Published
|
May 11, 2007 |
|
Detailed Description
|
SENSITRON SEMICONDUCTOR
TECHNICAL DATA Datasheet 4165, Rev. B
SPM6G060-120D
Three-Phase IGBT BRIDGE, With Gate Driver ...
|
|
Datasheet
|
SPM6G060-120D
|
Overview
SENSITRON SEMICONDUCTOR
TECHNICAL DATA Datasheet 4165, Rev.
B
SPM6G060-120D
Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation
DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
(Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT
PARAMETER
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage IC = 500 µA, VGE = 0V Continuous Collector Current TC = 25 OC
O
BVCES IC ICM VGE IGES ICES
1200 -
-
60 40 100 +/-20 +/- 200
V A A V nA
TC = 90 C Pulsed Collector Current, Pulse Width limited by TjMax Gate to Emitter Voltage Gate-Emitter Leakage Current , VGE = +/-20V Zero Gate Voltage Collector Current
www.
DataSheet4...
Similar Datasheet