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Part Number
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SPM6M060-010D |
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Manufacturer
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Sensitron |
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Description
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Three-Phase MOSFET BRIDGE |
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Published
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May 11, 2007 |
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Detailed Description
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SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATA SHEET 4096, Rev A
SPM6M060-010D
Three-Phase MOSFET Bridge, With Gate Drive...
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Datasheet
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SPM6M060-010D
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Overview
SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATA SHEET 4096, Rev A
SPM6M060-010D
Three-Phase MOSFET Bridge, With Gate Driver and Optical Isolation
DESCRIPTION: A 100 VOLT, 60 AMP, THREE PHASE MOSFET BRIDGE
ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED)
PARAMETER MOSFET SPECIFICATIONS Drain to Source Breakdown Voltage IC = 250 µA, VGS = 0V Continuous Drain Current Pulsed Drain Current, 1mS
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SYMBOL
MIN
TYP
MA X
UNIT
BVCSS TC = 25 OC TC = 90 C IDM VGS IGSS V
GS(TH) O
100
-
V
ID
-
-
60 50 100
A
A V nA V
Gate to Source Voltage Gate-Source Leakage Current , VGS = +/-20V Gate Threshold Voltage, IC=1mA Zero Gate Voltage Drain Curren...
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