Part Number
|
IRF9952PBF |
Manufacturer
|
International Rectifier |
Description
|
HEXFET Power MOSFET |
Published
|
May 15, 2007 |
Detailed Description
|
PD - 95135
IRF9952PbF
l l l l l l l
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surfac...
|
Datasheet
|
IRF9952PBF
|
Overview
PD - 95135
IRF9952PbF
l l l l l l l
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free
HEXFET® Power MOSFET
S1 G1 S2 G2
N-CHANNEL MOSFET 1 8 2 7
D1 D1 D2 D2
N-Ch P-Ch VDSS 30V -30V
3
6
4
5
P-CHANNEL MOSFET
Top View
RDS(on) 0.
10Ω 0.
25Ω
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient...
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