SemiWell Semiconductor
SBR13003
High Voltage Fast-Switching
NPN Power
Transistor
Features
- Very High Switching Speed (Typical 120ns@1.
0A) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 200mV@1.
0A/0.
25A) - Wide Reverse Bias S.
O.
A
Symbol
○
2.
Collector
1.
Base
○
c
○
3.
Emitter
General Description
This devices is designed for high voltage, high speed switching characteristic required such as lighting system, switching
regulator, inverter and deflection circuit.
TO-126
1
2
3
Absolute Maximum Ratings
Symbol
VCES VCEO VEBO IC ICM IB IBM PC TSTG TJ
Parameter
Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Voltage ( IB = 0 ) Emitter-Base Voltage ( IC = 0 ) Collector ...