4.
0-11.
0 GHz GaAs MMIC Buffer Amplifier March 2007 - Rev 06-Mar-07 B1007-BD Chip Device Layout Features Excellent Transmit LO/Output Buffer Stage Compact Size 23.
0 dB Small Signal Gain +20.
0 dBm P1dB Compression Point 4.
5 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s two stage 4.
0-11.
0 GHz GaAs MMIC buffer amplifier has a small signal gain of 23.
0 dB with a +20.
0 dBm P1dB output compression point.
This MMIC uses Mimix Broadband’s 0.
15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.
The chip has surface passi...

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