11.
0-16.
0 GHz GaAs MMIC Power Amplifier May 2006 - Rev 10-May-06 P1008 Chip Device Layout Features Excellent Linear Output Amplifier Stage 31.
0 dB Small Signal Gain +30.
0 dBm P1dB Compression Point +38.
5 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Mimix Broadband’s three stage 11.
0-16.
0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +38.
5 dBm.
This MMIC uses Mimix Broadband’s 0.
15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.
The chip has surface passivation to protect a...

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