17.
0-26.
0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1013 Chip Device Layout Features Excellent Saturated Output Stage Competitive RF/DC Bias Pin for Pin Replacement 20.
0 dB Small Signal Gain +24.
0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s three stage 17.
0-26.
0 GHz GaAs MMIC power amplifier has a small signal gain of 20.
0 dB with a +24.
0 dBm saturated output power.
This MMIC uses Mimix Broadband’s 0.
15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.
The chip has surface passivatio...

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