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Part Number
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XP1021-BD |
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Manufacturer
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Mimix Broadband |
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Description
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GaAs MMIC Power Amplifier |
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Published
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May 25, 2007 |
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Detailed Description
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17.0-22.0 GHz GaAs MMIC Power Amplifier
April 2007 - Rev 17-Apr-07
P1021-BD Chip Device Layout
XP1021-BD
Features
Exce...
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Datasheet
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XP1021-BD
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Overview
17.
0-22.
0 GHz GaAs MMIC Power Amplifier
April 2007 - Rev 17-Apr-07
P1021-BD Chip Device Layout
XP1021-BD
Features
Excellent Saturated Output Stage 22.
0 dB Small Signal Gain +27.
0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
General Description
Mimix Broadband’s three stage 17.
0-22.
0 GHz GaAs MMIC power amplifier has a small signal gain of 22.
0 dB with a +27.
0 dBm saturated output power.
This MMIC uses Mimix Broadband’s 0.
15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.
The chip has surface passivation to protect and provide a rugge...
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