17.
0-25.
0 GHz GaAs MMIC Power Amplifier February 2007 - Rev 05-Feb-07 P1022-BD Chip Device Layout Features Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.
0 dB Small Signal Gain +28.
0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s three stage 17.
0-25.
0 GHz GaAs MMIC buffer amplifier has a small signal gain of 20.
0 dB with a +28.
0 dBm P1dB output compression point across the band.
The device also includes an on-chip temperature compensated output power detector.
This MMIC uses Mimix Broadband’s 0.
15 µm GaAs PHEMT device model te...

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