24.
0-34.
0 GHz GaAs MMIC Power Amplifier April 2007 - Rev 17-Apr-07 P1023-BD Chip Device Layout Features Excellent Saturated Output Stage 16.
0 dB Small Signal Gain +24.
0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 XP1023-BD General Description Mimix Broadband’s three stage 24.
0-34.
0 GHz GaAs MMIC power amplifier has a small signal gain of 16.
0 dB with a +24.
0 dBm saturated output power.
This MMIC uses Mimix Broadband’s 0.
15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.
The chip has surface passivation to protect and provide a rugg...

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