FDA20N50 500V N-Channel MOSFET
January 2006
UniFET
FDA20N50
500V N-Channel MOSFET
Features
• 20A, 500V, RDS(on) = 0.
24Ω @VGS = 10 V • Low gate charge ( typical 45.
6 nC) • Low Crss ( typical 27 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switched mode power supplies...