|
Part Number
|
IRF1010ELPbF |
|
Manufacturer
|
International Rectifier |
|
Description
|
HEXFET Power MOSFET |
|
Published
|
May 28, 2007 |
|
Detailed Description
|
PD - 95444
Advanced Process Technology l Surface Mount (IRF1010ES) l Low-profile through-hole (IRF1010EL) l 175°C Opera...
|
|
Datasheet
|
IRF1010ELPbF
|
Overview
PD - 95444
Advanced Process Technology l Surface Mount (IRF1010ES) l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l
IRF1010ESPbF IRF1010ELPbF
HEXFET® Power MOSFET
D
VDSS = 60V RDS(on) = 12mΩ
G S
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a s...
Similar Datasheet