PD-95184
IRG4PC40UPbF
INSULATED GATE BIPOLAR
TRANSISTOR
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, 200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free
C
UltraFast Speed IGBT
VCES = 600V
G E
VCE(on) typ.
= 1.
72V
@VGE = 15V, IC = 20A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C...