PD - 95647
IRG4PC50KPbF
INSULATED GATE BIPOLAR
TRANSISTOR
Short Circuit Rated UltraFast IGBT
VCES = 600V
Features
High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed Latest generation design provides tighter parameter distribution and higher efficiency than previous generations Lead-Free
C
G E
VCE(on) typ.
= 1.
84V
@VGE = 15V, IC = 30A
n-channel
Benefits
As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT Latest generation 4 IGBTs offer highest power density mot...