PD - 91682A
IRG4PSC71UD
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations • IGBT co-packaged with HEXFRED ultrafast, ultrasoft recovery anti-parallel diodes for use in bridge configurations • Industry-benchmark Super-247 package with higher power handling capability compared to same footprint TO-247 • Creepage distance increased to 5.
35mm
C
UltraFast CoPack IGBT
VCES = 600V
G E
VCE(on) typ.
= 1.
67V
@VGE = 15V, IC = 60A
n-cha n ne l
Benefits
• Generation 4 IGBT's offer highest efficiencies available • Maximu...