PD - 93891A Ignition IGBT Features •Most Rugged in Industry •Logic-Level Gate Drive • 6KV ESD Gate Protection •Low Saturation Voltage •High Self-clamped Inductive Switching Energy The advanced IGBT process family includes a MOS gated, N-channel logic level device which is intended for coil-on-plug automotive ignition applications and small-engine ignition circuits.
Unique features include on-chip active voltage clamps between the Gate-Emitter and Gate-Collector which provide over voltage protection capability in ignition circuits.
Absolute Maximum Ratings Parameter Max Clamped 20 14 1 10 Clamped 125 54 - 40 to 175 - 40 to 175 6 11.
5 Unit V A A mA IGBT with on-chip Gate-Emitter and Gate-Co...

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