PD - 94383D
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRGB15B60KD IRGS15B60KD IRGSL15B60KD
VCES = 600V IC = 15A, TC=100°C
Features
• Low VCE (on) Non Punch Through IGBT Technology.
www.
DataSheet4U.
com • Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
G E
tsc 10µs, TJ=150°C
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
n-channel
VCE(on) typ.
= 1.
8V
TO-220AB IRGB15B60KD
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM IL...