| Part Number | IRGSL15B60KD |
| Manufacturer | International Rectifier |
| Title | INSULATED GATE BIPOLAR TRANSISTOR |
| Description | PD - 94383D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB15B60KD IRGS15B60KD IRGSL15B60KD VCES = 600V IC = 15A, TC... |
| Features |
• Low VCE (on) Non Punch Through IGBT Technology. www.DataSheet4U.com • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. G E tsc 10µs, TJ=150°C Benefits • Benchmark Efficiency for Moto... |
| File Size | 373.45KB |
| Datasheet |
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IRGSL15B60KDPbF : PD - 95194A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free C IRGB15B60KDPbF IRGS15B60KDPbF IRGSL15B60KDPbF VCES = 600V IC = 15A, TC=100°C G E tsc 10µs, TJ=150°C n-channel VCE(on) typ. = 1.8V Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. TO-220AB D2Pak IRGS15B60KDPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°.