PD - 95645A
INSULATED GATE BIPOLAR
TRANSISTOR
Features
• • • • • Low VCE (on) Non Punch Through IGBT Technology.
10µs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Lead-Free.
IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF
C
VCES = 600V IC = 20A, TC=100°C
G E
tsc10µs, TJ=150°C
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
n-channel
VCE(on) typ.
= 1.
8V
TO-220AB D2Pak IRGB8B60KPbF IRGS8B60K
TO-262 IRGSL8B60K
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C Collector-to-Emitter Voltage Continuous Collector Cu...