Part Number
|
IRLI2505 |
Manufacturer
|
International Rectifier |
Description
|
POWER MOSFET |
Published
|
May 30, 2007 |
Detailed Description
|
PD - 9.1327A
IRLI2505
HEXFET® Power MOSFET
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance...
|
Datasheet
|
IRLI2505
|
Overview
PD - 9.
1327A
IRLI2505
HEXFET® Power MOSFET
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.
5KVRMS
l Sink to Lead Creepage Dist.
= 4.
8mm l Fully Avalanche Rated Description
l l
D
VDSS = 55V
G S
RDS(on) = 0.
008Ω ID = 58A
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 Fu...
Similar Datasheet