Part Number
|
IRLU2905ZPBF |
Manufacturer
|
International Rectifier |
Description
|
POWER MOSFET |
Published
|
May 30, 2007 |
Detailed Description
|
PD - 95774B
IRLR2905ZPbF
IRLU2905ZPbF
Features
l Logic Level
l Advanced Process Technology
l Ultra Low On-Resistan...
|
Datasheet
|
IRLU2905ZPBF
|
Overview
PD - 95774B
IRLR2905ZPbF
IRLU2905ZPbF
Features
l Logic Level
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
l Lead-Free
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 13.
5mΩ
ID = 42A
...
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