US5U29
Transistor
2.
5V Drive Pch+SBD MOS FET
US5U29
zStructure Silicon P-channel MOS FET
Schottky Barrier DIODE zExternal dimensions (Unit : mm)
TUMT5
2.
0 1.
3 0.
65 0.
65
0.
85Max.
0.
77
zFeatures 1) The US5U29 combines Pch MOS FET with a
Schottky barrier diode in a TUMT5 package.
2) Low on-resistance with fast switching.
3) Low voltage drive (2.
5V).
4) Built-in
schottky barrier diode has low forward voltage.
(5)
(4)
1.
7
0.
3
0.
2
(1)
(2)
(3)
2.
1
0~0.
1
0.
17
Abbreviated symbol : U29
zApplications Load switch, DC/DC conversion
zPackaging specifications
Package Type US5U29 Code Basic ordering unit (pieces) Taping TR 3000
zEquivalent circuit
(5) (4)
∗2
∗1 (1) (2) ∗1 ESD protection...