FQB3N60C 600V N-Channel MOSFET
May 2006
QFET
FQB3N60C
600V N-Channel MOSFET Features
• 3A, 600V, RDS(on) = 3.
4Ω @ VGS = 10 V • Low gate charge ( typical 10.
5 nC) • Low Crss ( typical 5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, activ...