This dual N-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications. S2 S1 G1 5 4 Bottom Drain Contact 3 2 1 Bottom Drain Contact S1 www.
■ 3.2 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V
■ Low gate charge
■ High performance trench technology for extremely low RDS(ON)
■ FLMP SC75 package: Enhanced thermal performance in industry-standard package size
Applications
■ Battery management
General Description
This dual N-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.
S2 S1 G1
5 4
Bottom Drain Contact
3 2 1
Bottom Drain Contact
S1
www.Da.
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