FDN352AP Single P-Channel, PowerTrench® MOSFET August 2005 FDN352AP Single P-Channel, PowerTrench® MOSFET Features ■ –1.
3 A, –30V –1.
1 A, –30V RDS(ON) = 180 mΩ @ VGS = –10V RDS(ON) = 300 mΩ @ VGS = –4.
5V ■ High performance trench technology for extremely low RDS(ON).
■ High power version of industry Standard SOT-23 package.
Identical pin-out to SOT-23 with 30% higher power handling capability.
General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for l...

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