PD - 95287A IRF7492PbF HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS 200V RDS(on) max 79mW@VGS = 10V ID 3.
7A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) l Fully Characterized Avalanche Voltage and Current S S S G 1 2 3 4 8 7 A A D D D D 6 5 Top View SO-8 www.
DataSheet4U.
com Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C dv/dt TJ TSTG Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power D...

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