Part Number
|
IRFR3710ZPBF |
Manufacturer
|
International Rectifier |
Description
|
Automotive MOSFET |
Published
|
Jun 5, 2007 |
Detailed Description
|
PD - 95513A
AUTOMOTIVE MOSFET
IRFR3710ZPbF IRFU3710ZPbF
HEXFET® Power MOSFET
D
Features
l l l l l l
Advanced Process...
|
Datasheet
|
IRFR3710ZPBF
|
Overview
PD - 95513A
AUTOMOTIVE MOSFET
IRFR3710ZPbF IRFU3710ZPbF
HEXFET® Power MOSFET
D
Features
l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
VDSS = 100V
G S
RDS(on) = 18mΩ ID = 42A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliab...
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