STN2NE10L
N-channel 100V - 0.
33Ω -2A - SOT-223 STripFET™ Power MOSFET
General features
Type
VDSS (@Tjmax)
RDS(on)
ID
2
STN2NE10L
100V
0.
4Ω
1.
8A
3
■ Exceptional dv/dt capability
2
1
■ Avalanche rugged technology
SOT-223
■ 100% avalanche tested
) ■ Low threshold drive ct(s Description du This Power MOSFET is the latest development of ro STMicroelectronics unique "Single Feature P Size™" strip-based process.
The resulting
transistor shows extremely high packing density
te for low on-resistance, rugged avalanche le characteristics and less critical alignment steps o therefore a remarkable manufacturing bs reproducibility.
Internal schematic diagram
ct(s) - O Applications du ■...