AO4822A Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Standard Product AO4822A is Pb-free (meets ROHS & Sony 259 specifications).
AO4822AL is a Green Product ordering option.
AO4822A and AO4822AL are electrically identical.
Features
VDS (V) = 30V ID = 8.
5A (VGS = 10V) RDS(ON) 16mΩ (VGS = 10V) RDS(ON) 26mΩ (VGS = 4.
5V)
D1 S2 G2 S1 G1 D2 D2 D1 D1
D2
www.
DataSheet4U.
com
1 2 3 4
8 7 6 5
G1 S1
G2 S2
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-S...