|
Part Number
|
IRGIB6B60KD |
|
Manufacturer
|
International Rectifier |
|
Description
|
INSULATED GATE BIPOLAR TRANSISTOR |
|
Published
|
Jun 9, 2007 |
|
Datasheet
|
IRGIB6B60KD
|
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
G E C
VCES = 600V IC = 6.0A, TC=90°C ...
Similar Datasheet