NZT605
NPN Darlington
Transistor
January 2007
NZT605
NPN Darlington
Transistor
• This device designed for applications requiring extremely high gain at collector currents to 1.
0A and high breakdown voltage.
• Sourced from process 06.
4
3 2 1
SOT-223
1.
Base 2.
4.
Collector 3.
Emitter
Absolute Maximum Ratings * T
Symbol
VCEO VCBO VEBO
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com
C
= 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
Value
110 140 10 1.
5 -55 to +150
Units
V V V A °C
IC TJ, TSTG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any se...