JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
,LTD
SOT-23 Plastic-Encapsulate
Transistors
SOT¡ª 23
SS8050LT1
FEATURES
TRANSISTOR£¨
NPN £©
1.
BASE 2.
EMITTER 3.
COLLECTOR
Power dissipation PCM : 0.
3 W£¨ Tamb=25¡æ£© Collector current ICM : 1.
5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ
Unit : mm
ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ
Parameter Collector-base breakdown voltage
com
unless
Test
otherwise
specified£©
MIN 40 25 5 0.
1 0.
1 0.
1 120 40 0.
5 1.
2 100 V V MHz 350 TYP MAX UNIT V V V ¦Ì A ¦Ì A ¦Ì A
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1)
conditions
Ic= 100¦Ì A£¬ IE=0 Ic= 0.
1m...