ZXTN25012EFL 12V, SOT23,
NPN low power
transistor
Summary
BVCEO 12V BVECO 4.
5V hFE 500 IC(cont) = 2A VCE(sat) 65 mV @ 1A RCE(sat) = 46 m⍀ PD = 350mW
Description
Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.
C
B
Features
www.
DataSheet4U.
com
• • •
High peak current Low saturation voltage 6V reverse blocking voltage
E
Applications
• • • • MOSFET and IGBT gate driving DC-DC conversion LED driving Interface between low voltage IC's and load
E C B Pinout - top view
Ordering information
Device ZXTN25012EFLTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000
Device...