Part Number
|
GB10RF120K |
Manufacturer
|
International Rectifier |
Description
|
IGBT PIM MODULE |
Published
|
Jun 29, 2007 |
Detailed Description
|
Bulletin I27278 01/07
GB10RF120K
IGBT PIM MODULE
Features
• Low VCE (on) Non Punch Through IGBT Technology • Low Diode ...
|
Datasheet
|
GB10RF120K
|
Overview
Bulletin I27278 01/07
GB10RF120K
IGBT PIM MODULE
Features
• Low VCE (on) Non Punch Through IGBT Technology • Low Diode VF • 10μs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics • Positive VCE (on) Temperature Coefficient • Ceramic DBC Substrate • Low Stray Inductance Design • TOTALLY LEAD-FREE
VCES = 1200V IC = 13A @ TC=80°C tsc 10μs @ TJ =150°C ECONO2 PIM VCE(on) typ.
= 2.
68V
Benefits
• • • • • • • Benchmark Efficiency for Motor Control Rugged Transient Performance Low EMI, Requires Less Snubbing Direct Mounting to Heatsink PCB Solderable Terminals Low Junction to Case Thermal Resistance UL Approved E78996
R 23 24
A...
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