TK15H50C
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (π-MOS VI)
TK15H50C
○ Switching
Regulator Applications
Unit: mm
• Low drain−source ON resistance : RDS (ON) = 0.
33 Ω (typ.
)
• High forward transfer admittance : |Yfs| = 8.
5 S (typ.
)
• Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
• Enhancement mode
: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy...