PD -91776
IRG4PH20K
INSULATED GATE BIPOLAR
TRANSISTOR
Features
• High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations
C
Short Circuit Rated UltraFast IGBT
VCES = 1200V
G E
VCE(on) typ.
= 3.
17V
@VGE = 15V, IC = 5.
0A
n-channel
Benefits
• As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT • Latest generation 4 IGBT's offer highest power density motor controls possible
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