MITSUBISHI SEMICONDUTOR GaAs FET
Feb.
/2007
MGF4961B
SUPER LOW NOISE InGaAs HEMT
DESCRIPTION
The MGF4961B super-low noise HEMT (High Electron Mobility
Transistor) is designed for use in K band amplifiers.
Outline Drawing
4.
0±0.
2 (1.
05) 1.
9±0.
1 (1.
05)
(unit: mm)
FEATURES
Low noise figure @ f=20GHz NFmin.
= 0.
7dB (Typ.
) High associated gain @ f=20GHz Gs = 13.
5dB (Typ.
)
(1.
05)
①
C to K band low noise amplifiers
0.
5±0.
1
③
1.
19±0.
2 0.
125 ±0.
05
QUALITY GRADE
GG GD-31
(1.
05)
APPLICATION
1.
02±0.
1
②
②
1.
9±0.
1
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
MITSUBISHI Proprietary
Not to be reproduced or disclosed without permission by Mitsubishi Electric
ORDERING INFORMATION
Tape & r...