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MGFC41V6472

Part Number MGFC41V6472
Manufacturer Mitsubishi Electric
Description C band internally matched power GaAs FET
Published Jul 4, 2007
Detailed Description C band internally matched power GaAs FET MGFC41V6472 6.4 – 7.2 GHz BAND / 12W DESCRIPTION The MGFC41V6472 is an inte...
Datasheet MGFC41V6472




Overview
C band internally matched power GaAs FET MGFC41V6472 6.
4 – 7.
2 GHz BAND / 12W DESCRIPTION The MGFC41V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.
4 – 7.
2 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=12W (TYP.
) @f=6.
4 – 7.
2GHz  High power gain GLP=9.
0dB (TYP.
) @f=6.
4 – 7.
2GHz  High power added efficiency P.
A.
E.
=32% (TYP.
) @f=6.
4 – 7.
2GHz  Low distortion [item -51] IM3=-45dBc (TYP.
) @Po=30dBm S.
C.
L APPLICATION  item 01 : 6.
4 – 7.
2 GHz band power amplifier  item 51 : 6.
4 – 7.
2 GHz band digital radio commun...






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