Part Number
|
MGFC41V6472 |
Manufacturer
|
Mitsubishi Electric |
Description
|
C band internally matched power GaAs FET |
Published
|
Jul 4, 2007 |
Detailed Description
|
C band internally matched power GaAs FET
MGFC41V6472
6.4 – 7.2 GHz BAND / 12W
DESCRIPTION
The MGFC41V6472 is an inte...
|
Datasheet
|
MGFC41V6472
|
Overview
C band internally matched power GaAs FET
MGFC41V6472
6.
4 – 7.
2 GHz BAND / 12W
DESCRIPTION
The MGFC41V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.
4 – 7.
2 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Class A operation Internally matched to 50(ohm) system High output power
P1dB=12W (TYP.
) @f=6.
4 – 7.
2GHz High power gain
GLP=9.
0dB (TYP.
) @f=6.
4 – 7.
2GHz High power added efficiency
P.
A.
E.
=32% (TYP.
) @f=6.
4 – 7.
2GHz Low distortion [item -51]
IM3=-45dBc (TYP.
) @Po=30dBm S.
C.
L
APPLICATION
item 01 : 6.
4 – 7.
2 GHz band power amplifier item 51 : 6.
4 – 7.
2 GHz band digital radio commun...
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