C band internally matched power GaAs FET MGFC45B3436B 3.
4 – 3.
6 GHz BAND / 30W DESCRIPTION The MGFC45B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.
4 – 3.
6 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES Class AB operation Internally matched to 50(ohm) system  High output power Po(SAT)=30W (TYP.
) @f=3.
4 – 3.
6GHz  High power gain GLP=11.
0dB (TYP.
) @f=3.
4 – 3.
6GHz  Distortion ACP=-45dBc (TYP.
) @f=3.
4 – 3.
6GHz RECOMMENDED BIAS CONDITIONS  VDS=12V  ID=0.
8A  RG=12ohm Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGDO Gate to drain breakdown voltage -15 VGSO Gate to s...

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