Freescale Semiconductor Technical Data
Document Number: MRFE6P3300H Rev.
0, 5/2007
RF Power Field Effect
Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz.
The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 32 volt analog or digital television transmitter equipment.
• Typical Narrowband Two - Tone Performance @ 860 MHz: VDD = 32 Volts, IDQ = 1600 mA, Pout = 270 Watts PEP Power Gain — 20.
4 dB Drain Efficiency — 44.
8% IMD — - 28.
8 dBc • Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 3 dB Overdrive, Design...