Freescale Semiconductor Technical Data
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz.
Suitable for multicarrier amplifier applications.
• Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watts Avg.
, f = 880 MHz, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.
2288 MHz.
PAR = 9.
8 dB @ 0.
01% Probability on CCDF.
Power Gain — 19.
2 dB Drain Efficiency — 30.
5% ACPR @ 750 kHz Offset — - 47.
6 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Design...