MSC81350M
RF & MICROWAVE
TRANSISTORS AVIONICS APPLICATIONS
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REFRACTORY/GOLD METALLIZATION RUGGEDIZED VSWR 20:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE P OUT = 350 W MIN.
WITH 7.
0 dB GAIN
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400 x .
400 2NLFL (S042) hermetically sealed ORDER CODE MSC81350M BRANDING 81350M
PIN CONNECTION DESCRIPTION The MSC81350M device is a high power pulsed
transistor specifically designed for IFF avionics applications.
This device is capable of withstanding a minimum 20:1 load VSWR at any phase angle under full rated conditions.
Low RF thermal resistance and semi automatic wire bonding techniques ensure high reliability and product consistency.
The MSC...