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Part Number
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MWE6IC9100GNR1 |
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Manufacturer
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Freescale Semiconductor |
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Description
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RF LDMOS Wideband Integrated Power Amplifiers |
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Published
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Jul 8, 2007 |
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Detailed Description
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ARCHIVE INFORMATION ARCHIVE INFORMATION
Freescale Semiconductor Technical Data
RF LDMOS Wideband Integrated Power Ampli...
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|
Datasheet
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MWE6IC9100GNR1
|
Overview
ARCHIVE INFORMATION ARCHIVE INFORMATION
Freescale Semiconductor Technical Data
RF LDMOS Wideband Integrated Power Amplifiers
The MWE6IC9100N wideband integrated circuit is designed with on--chip
matching that makes it usable from 869 to 960 MHz.
This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulations.
Final Application
• Typical GSM Performance: VDD = 26 Volts, IDQ1 = 120 mA, IDQ2 = 950 mA, Pout = 100 Watts CW, f = 960 MHz Power Gain — 33.
5 dB Power Added Efficiency — 54%
GSM EDGE Application
•
Typical GSM EDGE Performance:
870PmowAe, rPGouatin=
50 Watts Avg.
, — 35.
5 dB
Full
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