Part Number
|
IRF7329PBF |
Manufacturer
|
International Rectifier |
Description
|
HEXFET Power MOSFET |
Published
|
Jul 10, 2007 |
Detailed Description
|
PD - 95042
IRF7329PbF
HEXFET® Power MOSFET
l l l l l l
Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET...
|
Datasheet
|
IRF7329PBF
|
Overview
PD - 95042
IRF7329PbF
HEXFET® Power MOSFET
l l l l l l
Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (1.
8mm) Available in Tape & Reel Lead-Free
VDSS
-12V
RDS(on) max (mW)
17@VGS = -4.
5V 21@VGS = -2.
5V 30@VGS = -1.
8V
ID
±9.
2A ±7.
4A ±4.
6A
Description
New P-Channel HEXFET ® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
S1 G1 S2 G2
1 2 3 4
8 7
D1 D1 D2...
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