L/S band internally matched power GaAs FET MGFS52BN2122A 2.
1 – 2.
2 GHz BAND / 160W DESCRIPTION The MGFS52BN2122A is a 160W push-pull type GaAs power FET especially designed for use in 2.
1 – 2.
2GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES Push-pull configuration  High output power Pout=160W (TYP.
) @f=2.
17GHz  High power gain GLP=12.
0dB (TYP.
) @f=2.
17GHz  High power added efficiency P.
A.
E.
=48% (TYP.
) @f=2.
17GHz APPLICATION  2.
1-2.
2GHz band power amplifier for W-CDMA Base Station QUALITY  IG OUTLINE RECOMMENDED BIAS CONDITIONS  VDS=12V  ID=4.
0A  RG=5ohm for each gate Absolute maximum ratings (Ta=25C) Symbol Parameter ...

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