MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HHS1
4.
4+/-0.
1 1.
6+/-0.
1 LOT No.
3.
9+/-0.
3 3
1.
5+/-0.
1
0.
1
RoHS Compliance, DESCRIPTION
Silicon MOSFET Power
Transistor 30MHz,0.
3W
OUTLINE DRAWING
1.
5+/-0.
1
RD00HHS1 is a MOS FET type
transistor specifically designed for HF RF amplifiers applications.
TYPE NAME
FEATURES
High power gain Pout0.
3W, Gp19dB @Vdd=12.
5V,f=30MHz
0.
8 MIN 2.
5+/-0.
1
1
2
1.
5+/-0.
1
0.
4 +0.
03 -0.
05 Terminal No.
1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm
APPLICATION
For output stage of high power amplifiers in HF Band mobile radio sets.
0.
4+/-0.
07 0.
5+/-0.
07 0.
4+/-0.
07 0.
1 MAX
RoHS COMPLIANT
RD00HHS1-101,T113 is a RoHS c...