MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HVS1
4.
4+/-0.
1 1.
6+/-0.
1 LOT No.
3.
9+/-0.
3
RoHS Compliance, Silicon MOSFET Power
Transistor 175MHz,0.
5W DESCRIPTION
RD00HVS1 is a MOS FET type
transistor specifically designed for VHF/UHF RF amplifiers applications.
TYPE NAME
0.
8 MIN 2.
5+/-0.
1
OUTLINE DRAWING
1.
5+/-0.
1
FEATURES
High power gain Pout0.
5W, Gp20dB @Vdd=12.
5V,f=175MHz
1
2
1.
5+/-0.
1
3
1.
5+/-0.
1
0.
4 +0.
03 -0.
05 Terminal No.
1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm
APPLICATION
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.
0.
4+/-0.
07 0.
5+/-0.
07 0.
4+/-0.
07 0.
1 MAX
RoHS COMPLIANT
RD00HVS1-101,T113 is a ...