MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD05MMP1
(a) 0.
2+/-0.
05 0.
65+/-0.
2 (c) (b) 7.
0+/-0.
2 (b) 8.
0+/-0.
2 6.
2+/-0.
2 4.
2+/-0.
2 5.
6+/-0.
2
RoHS Compliance, Silicon MOSFET Power
Transistor, 941MHz, 5.
5W DESCRIPTION
RD05MMP1 is a MOS FET type
transistor specifically designed for UHF RF power amplifiers applications.
(3.
6)
OUTLINE DRAWING
(d)
FEATURES
•High power gain: Pout5.
5W, Gp8.
9dB@Vdd=7.
2V,f=941MHz •High Efficiency: 43%min.
(941MHz) •No gate protection diode
INDEX MARK [Gate]
(4.
5)
0.
95+/-0.
2
2.
6+/-0.
2
TOP VIEW
DETAIL A
SIDE VIEW
1.
8+/-0.
1
BOTTOM VIEW
Terminal No.
(a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source
APPLIC...